Chemical vapour deposition of Al2O3 on titanium oxides
نویسندگان
چکیده
منابع مشابه
Chemical Vapour Deposition of Gas Sensitive Metal Oxides
This article presents a review of recent research efforts and developments for the fabrication of metal-oxide gas sensors using chemical vapour deposition (CVD), presenting its potential advantages as a materials synthesis technique for gas sensors along with a discussion of their sensing performance. Thin films typically have poorer gas sensing performance compared to traditional screen printe...
متن کاملAtmospheric pressure chemical vapour deposition of boron doped titanium dioxide for photocatalytic water reduction and oxidation.
Boron-doped titanium dioxide (B-TiO2) films were deposited by atmospheric pressure chemical vapour deposition of titanium(iv) chloride, ethyl acetate and tri-isopropyl borate on steel and fluorine-doped-tin oxide substrates at 500, 550 and 600 °C, respectively. The films were characterised using powder X-ray diffraction (PXRD), which showed anatase phase TiO2 at lower deposition temperatures (5...
متن کاملA review of chemical vapour deposition of graphene on copper†
The discovery of uniform deposition of high-quality single layered graphene on copper has generated significant interest. That interest has been translated into rapid progress in terms of large area deposition of thin films via transfer onto plastic and glass substrates. The opto-electronic properties of the graphene thin films reveal that they are of very high quality with transmittance and co...
متن کاملChemical Vapour Deposition for Optical Fibre Technology
At the beginning of the seventies, a break-through took place in the telecommunication research. The introduction of Chemical Vapour Deposition technology in the manufacture of optical fibres allowed both technical quality and economical convenience to realise optical networks, thus beginning the telecommunication revolution. Since that moment, a great development of the CVD techniques has been...
متن کاملSynthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1993
ISSN: 1155-4339
DOI: 10.1051/jp4:1993377